发明名称 REMOVING SOLUTION FOR PHOTORESIST
摘要 PURPOSE: To provide a removing solution for a photoresist which shows excellent removing performance and dissolving performance without containing a harmful component nor requiring a special rinsing liquid by mixing a specified compd. CONSTITUTION: This removing soln. is used to remove a photoresist film applied on a substrate. The soln. consists of 20-50wt.% aminoalcohol, 2-8wt.% water and 42-78wt.% glycol monoalkylether. As for the aminoalcohol, 1,2-aminoethanol, 1-amino-2-propanol, and 2-amino-1-propanol may be used, and especially 2- aminoethanol is preferable from an industrial point of view considering the removing performance and price. As for the glycolmonoalkyl ether, ethylene glycol monomethylether, ethylene glycol monoethylether, or diethylene glycol monobutylether may be used, and especially, diethylene glycol monobutyl ether is preferable.
申请公布号 JPH08123043(A) 申请公布日期 1996.05.17
申请号 JP19940263771 申请日期 1994.10.27
申请人 SUMITOMO CHEM CO LTD 发明人 TAGUCHI SATOSHI;SUETSUGU MASUMI
分类号 G03F7/42;C11D7/60;H01L21/027;(IPC1-7):G03F7/42 主分类号 G03F7/42
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