| 摘要 |
PURPOSE: To provide a halftone type phase shift mask capable of withstanding mask cleaning and the producing method. CONSTITUTION: In the halftone type phase shift mask 2' provided with a translucent phase shift layer on a transparent substrate and having a transmittance controlled so that the intensity of light passing through the phase shift layer is equal to below the sensitivity of a photoresist to be exposed by the transmitted light, a protective film 4 is provided on the outermost surface of the mask and in practical execution, the phase shift layer is composed of a nitride oxide film of molybdenum silicide and the protective film 4 is composed of a silicon oxide film. And the translucent phase shift layer is provided on the transparent substrate 1, the halftone type phase shift mask 2' is formed by patterning the phase shift layer through photolithography process and after that, the protective layer 4 is provided on the outermost surface. |
