| 摘要 |
<p>PURPOSE: To make semiconductor products uniform in loading effect at development, to set resist patterns used for dissimilar semiconductor devices uniform in manufacturing conditions, and to make semiconductor products uniform in loading effect at etching. CONSTITUTION: The actual transmission factor B2 of a reticule used for forming a wiring pattern is obtained (step 201), and then the transmission factor B2 of a reticule or the number C2 of shots are so controlled as to make an etching area S1 obtained in a manufacturing process where a semiconductor product which serves as a standard is formed equal to another etching area S2 obtained in a manufacturing process where a current semiconductor product is formed (step 202). A resist pattern is formed (step 203) using the optimal processing conditions obtained in a manufacturing process where a certain semiconductor product is formed, and a wiring pattern is formed (step 204).</p> |
