SEMICONDUCTOR DEVICE AND FABRICATION THEREOF

摘要

PURPOSE: To realize a semiconductor device in which short circuit can be suppressed while restraining increase of occupation area and misalignment does not cause fluctuation in the interelectrode capacitance. CONSTITUTION: A thin film layer 5 having a recess 5b superposed on a first electrode 2 and a part of a second electrode 9 and a protrusion 5a superposed on the first electrode 2 is formed such that the planar profile is symmetric with respect to the center lines of the protrusion 5a and the recess 5b and the thin film layer 5 is present at least at a twisted intersection of the edge of first electrode 2 in the direction perpendicular to the longitudinal direction thereof and the second electrode 9. The second electrode 9 has a protrusion 9c superposed on the first electrode 2 and a part of the protrusion 5a of the thin film layer 5 wherein the lateral length projecting from the protrusion 5a of the thin film layer 5 is equal to the lateral length of the recess 5b in the thin film layer 5. A third electrode 10 is formed to intersect the first electrode 2, while being twisted, at the protrusion 5a of the thin film layer 5.