| 摘要 |
<p>PURPOSE: To prevent a metal layer in the chip isolating groove of a semiconduc tor substrate front surface side from contacting the rear polished surface of the substrate and to further improve the mechanical strength of coupling be tween semiconductor chips after a PHS layer is formed by suppressing the crack of the substrate due to a plating protrusion. CONSTITUTION: A semiconductor substrate 1 is etched with a first PHS layer 100 formed on the rear surface of the substrate 1 reduced in thickness by polishing or thinning the rear surface as a mask, a second chip isolating groove 2 is formed on the region of the substrate front surface side corresponding to the groove 2, and a second PHS layer 101 is formed on the entire rear surface of the substrate. Thus, since the thickness of a metal layer 5 in a first groove is thin 1μm or less, its crack can be suppressed. Since the layer 5 is not brought into contact with the polished rear surface of the substrate, the damage of the metal layer can be prevented. Further, since the second PHS layer is formed on the entire rear surface of the substrate, the strength of mechanical bond between the chips is also improved.</p> |
