| 摘要 |
PURPOSE: To form a lead integrally with a semiconductor element by forming a conductive layer at the predetermined parts in the electrode part of a semiconductor element and on an insulation layer, removing the semiconductor substrate part except the region for forming a semiconductor element, and then cutting the insulation layer and the conductive layer being left into a predetermined length. CONSTITUTION: A semiconductor element 2 is formed on the surface part of a semiconductor substrate 1 and an insulation layer 3 is formed thereon. A contact hole of same size as the electrode part 4 of the semiconductor element 2 is then made through the insulation layer 3 and a thin film wiring pattern 5 is formed on the contact hole and at a predetermined part of the insulation layer 3. Subsequently, the semiconductor substrate 1 is removed while leaving a part slightly larger than the region for forming the semiconductor element 2. The insulation layer 3 and the wiring pattern 5 being left after removal of the semiconductor substrate 1 are then cut at predetermined positions thus producing a semiconductor device 7 with a lead 6. Consequently, the lead can be formed integrally with the semiconductor element.
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