发明名称 Sodium sensitive film field-effect sensor construction
摘要 A silicon-dioxide film is built on a silicon substrate. A silicon-nitride film is formed above this. On this film the sodium-alum-silicate membrane is deposited using reactive high-frequency magneton sputtering with a cylindrical cathode of sodium-alum-silicate glass at a power of 100-200 W in a 20/80% argon/oxygen atmos. at a pressure of 1 to 10 mu bar. This is followed by heat treatment at 400-600 deg C for 15-30 mins.. The cathode is formed by cold-pressing and sintering a powdered mixt. of 20 mol.% sodium oxide, 17 mol.% aluminium oxide ad 63 mol.% silicon oxide.
申请公布号 DE19514251(C1) 申请公布日期 1996.05.15
申请号 DE19951014251 申请日期 1995.04.15
申请人 FORSCHUNGSZENTRUM KARLSRUHE GMBH, 76133 KARLSRUHE, DE 发明人 SCHLESINGER, ROLAND, DR., 76297 STUTENSEE, DE;BRUNS, MICHAEL, DR., 64319 PFUNGSTADT, DE;BECHT, RONALD, 76133 KARLSRUHE, DE;HOFFMANN, WERNER, DR., 01277 DRESDEN, DE;ACHE, HANS-JOACHIM, PROF. DR., 76133 KARLSRUHE, DE
分类号 C03C17/34;C03C23/00;C23C14/34;G01N27/414;(IPC1-7):H01L21/335;C03C3/083;C23C14/35;C23C14/58 主分类号 C03C17/34
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