| 发明名称 |
METHOD FOR GROWING GALLIUM NITRIDE COMPOUND SEMICONDUCTOR CRYSTAL, AND GALLIUM NITRIDE COMPOUND SEMICONDUCTOR DEVICE |
| 摘要 |
<p>In a method for growing a gallium nitride semiconductor crystal on a single-crystal substrate, the (011) or (101) face of perovskite containing group 13 (3B) rare-earth elements is used as the single-crystal substrate, so that a gallium nitride semiconductor crystal having an excellent crystallinity is formed on the surface of the substrate by epitaxial growth. <IMAGE></p> |
| 申请公布号 |
EP0711853(A1) |
申请公布日期 |
1996.05.15 |
| 申请号 |
EP19950914510 |
申请日期 |
1995.04.05 |
| 申请人 |
JAPAN ENERGY CORPORATION |
发明人 |
TOGAWA, SEIJI;OKAZAKI, HITOSHI |
| 分类号 |
C30B23/02;C30B25/02;H01L21/20;H01L33/16;H01L33/32;(IPC1-7):C30B23/00;H01L21/203 |
主分类号 |
C30B23/02 |
| 代理机构 |
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| 主权项 |
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