Semiconductor component insulating method for e.g. LOCOS-processed component

摘要

The method involves forming first bed oxide insulating layer (12), a polysilicon layer (13), and a second nitride insulating layer (14) on a semiconductor substrate (11) in this order. A section of the second insulating layer is then removed from the substrate field region such that the other section of the second insulating layer remains over the substrate active region.The polysilicon layer then is etched, using the second insulating layer remaining over the active region as a mask. A field oxide layer (15) is then formed over the field region of the substrate. Pref. the polysilicon layer is edged obliquely. Regions, remaining after etching, may be greater than the desired active region.