发明名称 |
MANUFACTURE FOR SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE:To reduce the switching loss without increasing the forward voltage drop, by injecting Au ions by the use of a mask for a part of the surface of a gate region before thermal diffusion, when forming diffusion region such as Au shich is the center of carrier trapping for the required parts of the gate region. |
申请公布号 |
JPS53127278(A) |
申请公布日期 |
1978.11.07 |
申请号 |
JP19770042884 |
申请日期 |
1977.04.13 |
申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
WATAKABE YAICHIROU;BETSUSHIYO MIKIO |
分类号 |
H01L29/74;H01L29/10;H01L29/167 |
主分类号 |
H01L29/74 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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