Power stage realized with gate-controlled power semiconductor,申请号FI19940003153-传众专利搜索

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发明名称	Power stage realized with gate-controlled power semiconductor
摘要
申请公布号	FI96807(B)	申请公布日期	1996.05.15
申请号	FI19940003153	申请日期	1994.06.30
申请人	ABB INDUSTRY OY	发明人	TIKKANEN, KARI
分类号	H02M;H02M1/08;(IPC1-7):H02M1/08	主分类号	H02M
代理机构		代理人
主权项
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