发明名称 |
Methods for the formation of a silicon oxide film. |
摘要 |
Disclosed is a method for the formation of ceramic silicon oxide films on substrate surfaces wherein said films are thick, free of cracks and pinholes, and are also insoluble in organic solvents. These films are formed by coating the surface of a substrate with a silicon resin having the general formula (HR2SiO1/2)X(SiO4/2)1.0 wherein R is selected from hydrogen atom, alkyl groups, and aryl groups, and 0.1 </= X </= 2.0, and then heating the coated substrate to convert the coating into a ceramic silicon oxide film. |
申请公布号 |
EP0610899(A3) |
申请公布日期 |
1996.05.15 |
申请号 |
EP19940101924 |
申请日期 |
1994.02.08 |
申请人 |
DOW CORNING TORAY SILICONE COMPANY, LIMITED |
发明人 |
MINE, KATSUTOSHI;NAKAMURA, TAKASHI;SASAKI, MOTOSHI |
分类号 |
C03C17/23;C04B41/50;C04B41/87;C23C18/12;H01L21/316 |
主分类号 |
C03C17/23 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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