Semiconductor component formation on 2 region substrate

摘要

A first polysilicon layer is formed on the first region of a two region substrate and an oxide layer is formed on the first polysilicon layer. On the second substrate region is formed a second polysilicon layer, as well as on the first oxide layer.A nitride layer is formed on a part of the second polysilicon layer and the second polysilicon layer is oxidises. The polysilicon layer part on the first substrate region is oxidised considerably faster than the part under the nitride layer. The latter is removed and a dielectric layer formed on the second polysilicon layer part.