| 摘要 |
PCT No. PCT/JP93/00338 Sec. 371 Date Nov. 23, 1993 Sec. 102(e) Date Nov. 23, 1993 PCT Filed Mar. 23, 1993 PCT Pub. No. WO93/19022 PCT Pub. Date Sep. 30, 1992.The polysilicon thin film of the present invention is formed on a glass substrate or the like having a particulate product of SiOx (0<x</=2) of size not more than 100 ANGSTROM , for example, dispersed into not more than 100 pieces in an area of 0.1 mu m square. Furthermore, in the production method of a polysilicon thin film of the present invention, a particulate product of SiOx (0<x</=2) of size not more than 100 ANGSTROM , for example, dispersed into not more than 100 pieces in an area of 0.1 mu m square, is formed on a substrate, and thereafter a polysilicon thin film is grown using this particulate product as a nucleus.
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