发明名称 |
Method of making single polysilicon self-aligned bipolar transistor having reduced emitter-base junction |
摘要 |
A self-aligned single polysilicon bipolar transistor structure and a method of formation thereof are provided. The transistor has an emitter structure characterised by T shape defined by inwardly extending sidewall spacers formed by oxidation of amorphous or polycrystalline silicon, rather than the conventional oxide deposition and anisotropic etch back. Advantageously the method compatible with bipolar CMOS processing and provides a single polysilicon self-aligned bipolar transistor with a reduced number of processing steps. Further the formation of inwardly extending sidewalls defining the emitter width reduces the emitter base junction width significantly from the minimum dimension which is defined by photolithography, while a large area emitter contact is also provided.
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申请公布号 |
US5516708(A) |
申请公布日期 |
1996.05.14 |
申请号 |
US19940342041 |
申请日期 |
1994.11.17 |
申请人 |
NORTHERN TELECOM LIMITED |
发明人 |
LI, XIAO-MING;HERAK, T. VICTOR |
分类号 |
H01L21/331;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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