发明名称 Method for forming LDD pMOS with oblique implantation
摘要 A method and structure therefor for the formation of lightly doped drain regions, typically used in the manufacture of a field effect devices. The method includes the steps of providing a semiconductor substrate with a P type well region and an N type well region. Gate electrodes are formed overlying gate dielectric over each P type well and N type well regions. The method then performs a blanket N type implant step at an angle being about 20 degrees and greater from a perpendicular to the gate electrodes into both the P type and N type well regions. The blanket N type implant forms an LDD region in the P type well, and a buried region in the N type well. Sidewall spacers are then formed on edges of the gate electrodes. An N type implant step is then performed on the P type well region to form the source/drain region of a NMOS device. The method then performs two separate P type implants into the N type well, each at different angles and dosages, to form the P type LDD source/drain region for a PMOS device. The PMOS device includes the buried region which acts as a punchthrough stop, typically used to decrease short channel effects.
申请公布号 US5516711(A) 申请公布日期 1996.05.14
申请号 US19940357486 申请日期 1994.12.16
申请人 MOSEL VITELIC, INC. 发明人 WANG, CHIH-HSIEN
分类号 H01L21/265;H01L21/336;H01L21/8238;H01L27/092;H01L29/78;(IPC1-7):H01L21/265;H01L21/823 主分类号 H01L21/265
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