| 摘要 |
PURPOSE: To lessen the consumption of an electrode by etching and the formation of fine particles by specifying the Raman spectrum intensity of glassy carbon constituting the electrode plate for plasma etching of a silicon oxidized film on a wafer surface. CONSTITUTION: This electrode plate consists of the glassy carbon having the characteristic that the value of R defined by the equation; R=IA/IB in Raman spectrum analysis using an argon ion laser beam of a wavelength of 5145Å is in a range of 1.0 to 2.0, the half-amplitude level of IA is 30 to 90cm<-1> and the half-amplitude level of IB is in a range of 40 to 100cm<-1> . In the equation, IA denotes the spectral intensity in a band area of 1360±100cm<-1> and IB denotes the spectral intensity in an area of 1580±100cm<-1> . Etching resistance is improved by such electrode plate and the degree of consumption is effectively reduced. In addition, stable etching is executed in the state of not forming the particles. |
