SEMICONDUCTOR DEVICE AND THE FABRICATING METHOD THEREOF

摘要

a semiconductor substrate; an insulation film formed on the semiconductor substrate and having an opening portion of which part is exposed to light; and a wiring layer of first conduction material. The conduction material is formed by burying the opening portion perfectly by heat treating process and includes up to 0.5 wt.% Si. In the wiring layer, Al spiking is prevented from generation. The manufactured semiconductor device has high reliability.