The composition having p-n transfer preventing characteristic is composed of a polysilicon sinter in which Bi2Te3-group semiconductor material is served as the basic composition and Ag2S is added by 20mol% maximum.
申请公布号
KR960006241(B1)
申请公布日期
1996.05.11
申请号
KR19930024863
申请日期
1993.11.20
申请人
THE RESEARCH INSTITUTE OF NATIONAL DEFENCE SCIENCE
