发明名称 DEVICE FOR NON-DESTRUCTIVE MEASUREMENT OF INSULATING AND SEMICONDUCTOR FILM THICKNESS
摘要 FIELD: non-destructive tests of insulating and semiconductor films based on counting extremes of dependence of laser beam reflectance by film on varied angle of incidence of this beam on fixed measured film observed when angle of incidence of beam varies in specified range. SUBSTANCE: device has laser whose beam is directed onto flat mirror revolving about optical axis crossing its surface; first lens projecting image film point onto axis of revolution of flat mirror; and second lens projecting image of same point of film onto photodetector connected to recording instrument. With such arrangement of components, flat mirror rotation causes laser beam reflected by this mirror at point, which is image of film point being measured, to slide over lens surface and upon refraction by this lens it arrives at same point on film but at different positions, that is, at different angles. Second lens always directs beam reflected by film at point of measurement onto photodetector. As a result, recording instrument (such as oscilloscope) connected to photodetector records angular dependence of laser beam reflectance of analyzed film during flat mirror rotation. EFFECT: reduced cost of device due to dispensing with elliptical mirrors, enlarged functional capabilities.
申请公布号 RU94026729(A) 申请公布日期 1996.05.10
申请号 RU19940026729 申请日期 1994.07.08
申请人 FEDORTSOV A.V. 发明人 FEDORTSOV A.V.
分类号 G01B11/06 主分类号 G01B11/06
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