发明名称 Passiva element på substrat av monokristallint kisel
摘要 The component includes a substrate of mono-crystalline silicon upon which is located a membrane (10) on the substrate upper side. Under the membrane, e.g. of SiN or SiO2, is located a cavity (14) which extends downwards in the substrate from the top side to the rear (20), so that the substrate rear side is unbroken and the cavity extends downwards by a predetermined amount. The cavity depth is 25 per cent of the component (11) width, whereby the electrical and magnetic influence of the substrate on the component is negligible. The component comprises a transmission conduit incorporating a signal conduit (11) surrounded by a parallel earth conductor (12,13). The extent of the cavity across the signal conduit is greater than the width of the signal conduit. The component consists of a conductor comprising superimposed layers of metal, comprising from the membrane and upwards titanium, platinum, nickel and gold.
申请公布号 SE9601779(D0) 申请公布日期 1996.05.09
申请号 SE19960001779 申请日期 1996.05.09
申请人 IMC-INDUSTRIELLT MIKROELEKTRONIKCENTRUM AB 发明人 STEFAN *LINDGREN
分类号 H01L;H01L27/00;H01P3/08;(IPC1-7):H01L/ 主分类号 H01L
代理机构 代理人
主权项
地址