| 摘要 |
forming a gate electrode on a substrate; forming a gate insulation film over the resulting structure, and forming an active layer on the gate insulation film; forming a mask on channel region of the active layer, and forming a contact resistance layer by implanting n type ions of high concentration in the exposed active layer; and forming source/drain electrodes on both sides of the active layer. The process prevents threshold voltage and off-current from increasing, and decreases contact resistance between source/drain electrode and active layer.
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