MOS FIELD EFFECT TRANSISTOR MANUFACTURING PROCESS

摘要

forming an insulation layer locally on a semiconductor substrate; depositing polycrystal silicon over the resulting structure; recrystallizing polycrystal silicon to single crystal silicon to use the substrate to seed region; keeping source/drain on the insulation layer and single crystal silicon on a channel region by selective etching the single crystal silicon; forming a gate oxide film on the single crystal silicon of the channel region; and forming a gate electrode on the gate oxide film. The process can reduce source/drain area and realize higher integration of element.