| 摘要 |
An SOI substrate comprises a silicon supporting substrate, an insulating film formed on the top of the silicon supporting substrate and a silicon active layer formed on the insulating film. The silicon supporting substrate is doped with an impurity at a concentration not less than 1 x 10<1><7> atoms/cm<3>, provided that the impurity is kept in the solid solution state at a solidifying point of silicon. The impurity may comprise boron, phosphorus and arsenic. <IMAGE> |
