| 摘要 |
PURPOSE: To provide a semiconductor light emitting element wherein the generation of crystal defect and dislocation due to the mismatching of lattice constant and the difference of thermal expansion coefficients are restrained to the utmost, and cleavage is possible, and a manufacturing method of the element. CONSTITUTION: Nitride gallium based compound semiconductors 4-9 are laminated on the main surface of a substrate 3 of III-V compound semiconductor, such as GaAs, InAs, GaP, and InP, wherein As or P atoms are the outermost surface, and a light emitting element is constituted. |
