| 摘要 |
PURPOSE: To enable the semiconductor module to be cooled down while securing the mass productivity and the module compactness by a method wherein the fins making gaps within a specific range are structured in the first and second thermal conductive members having mutually opposing heat conductive surfaces. CONSTITUTION: Plural numbers of semiconductor devices 3 are mounted on a multilayered substrate 2 having multiple I/O pins through the intermediary of fine solder balls 4. Next, the first thermal conductive members 15 having the first planar fins 14 formed integrally with and vertically to bases 13 are fixed to the semiconductor device. Besides, the second thermal conductive members 19 comprising the other bases 17 and the second fins 18 are engaged with the first thermal conductive members 15 through the intermediary of fine gaps so as to form one thermal conductor making a pair with the first thermal conductive member 15. Furthermore, the gap between the first and second fins 14, 18 of the first and second thermal conductive members 15, 19 is specified within the range of 5-25μm. Through these procedures, the fin processing step can be facilitated thereby enabling the high cooling down capacity to be developed.
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