发明名称 Limitation of current absorption under short-to-plus unpowered conditions of the output node of an amplifier
摘要 A transistor in an output stage has an emitter connected to a supply rail and a collector connected to an output node. The transistor is protected against the effects of accidental shortcircuiting of the output node of the output stage with a positive pole of a battery while the circuit is unpowered, by a protection transistor of the same type as the transistor to be protected. The protection transistor has an emitter connected to the base of the output transistor, a collector connected to the output node of the output stage, and a base connected through a biasing resistance to the supply rail on the output stage. The protection transistor and an interdigitated structure of the transistor may be formed within the same pocket, thus reducing the required area.
申请公布号 US5515224(A) 申请公布日期 1996.05.07
申请号 US19940192426 申请日期 1994.02.07
申请人 SGS-THOMSON MICROELECTRONICS S.R.L. 发明人 BOTTI, EDOARDO;FASSINA, ANDREA;FERRARI, PAOLO
分类号 H03F1/52;(IPC1-7):H02H3/20 主分类号 H03F1/52
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