| 摘要 |
PURPOSE: To provide a semiconductor laser which enables cleavage of a wafer with good reproducibility and realizes easy ohmic contact of a substrate by readily operating a cut-out long bar. CONSTITUTION: An isolation guide groove 40 is formed in a first main surface of a semiconductor wafer. A mask 100 which is practically free from side etching is formed in a second main surface of a wafer. Vertically deep etching is carried out putting a mask between and a guide groove 30 is formed to a specified depth in an inside of a wafer from the second main surface. A wafer is cleaved by using the guide grooves as guides and it is separated to a plurality of semiconductor elements. Since a semiconductor wafer is thereby used as it is thick, a polishing process of a wafer is omitted and mechanical strength of a semiconductor device can be improved. Furthermore, in a semiconductor laser formed on a p-type InP substrate, good p-side ohmic contact can be readily acquired. |
