| 摘要 |
PURPOSE: To form easily a capacitor such that a leakage current is prevented from being generated in a DRAM memory cell, which has a stack capacitor formed using a capacitor insulating film having a crystal structure. CONSTITUTION: A DRAM memory cell has an SOI structure and a storage node 23, which is a capacitor lower electrode, is formed only on a flat region, which is located over between gate electrodes 4a and 4b adjacent to each other, of the surface of an insulating film 22, which has the electrodes 4a and 4b on its lower layer, to form a flat capacitor insulating film 24. |
