| 摘要 |
PURPOSE: To minimize the electric charge on a wafer in a plasma CVD or plasma etching apparatus. CONSTITUTION: A reaction furnace housing 1 houses a susceptor 2 and gas jet part 3 surrounded by an insulating cylinder 7 having notches 71 and 72 not obstructing a flow of reacted gas G' exhausted from exhaust holes 14, access to a wafer 5 through an openable window 12 and interior observation through a glass window 13. With applied high frequency voltage±V, electric charges produced at the wafer laid on a uniformly heating disc 21 disperse to the cylinder 7, thereby reducing the attraction of the wafer 5 to the disc 21. This facilitates the wafer to be pulled out of the furnace and avoids damaging the gate, etc., due to the electric discharge of the charges Q.
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