| 摘要 |
PURPOSE: To stably form a good amorphous semiconductor film by alternately repeating steps of depositing an amorphous semiconductor layer on a substrate and introducing H radicals into this semiconductor, using a high m. p. metal filament heat source. CONSTITUTION: SiH4 gas is introduced into a substrate 1 and power is applied between parallel flat plate electrodes to generate a SiH4 plasma 11 by which an amorphous Si:H film 10 of 2nm or less thick is formed. The SiH4 gas is then stopped and switched to H2 gas 14, and a filament 7 is heated to introduce H radicals into the film 10. The filament is made of W or Th-containing W alloy and covered with a diamond film to avoid reducing the mechanical strength. The above steps are repeated to form an amorphous semiconductor film of desired thickness. |
