发明名称 |
Semiconductor device having MOS transistor |
摘要 |
A semiconductor device which can effectively prevent impurity diffusion in heat treatment for electrically activating the impurity, and a manufacturing method thereof are disclosed. In the semiconductor device, a diffusion preventing layer having a depth equal to or greater than a junction depth of source/drain regions is formed along the entire junction region of the source/drain regions. The diffusion preventing layer is formed near the surface at the side of a gate insulation layer of the gate electrode including impurity.
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申请公布号 |
US5514902(A) |
申请公布日期 |
1996.05.07 |
申请号 |
US19940310513 |
申请日期 |
1994.09.22 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KAWASAKI, YOUJI;TAKAHASHI, TAKETO;MURAKAMI, TAKASHI |
分类号 |
H01L21/265;H01L21/28;H01L21/336;H01L21/8238;H01L27/092;H01L29/08;H01L29/10;H01L29/167;H01L29/49;(IPC1-7):H01L29/167;H01L29/207;H01L29/227 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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