| 摘要 |
An orientative ferroelectric thin film has such a structure that an epitaxial or orientative buffer layer having a double layer structure constituted by two layers is formed on a semiconductor single crystal (100) substrate, and an epitaxial or orientative perovskite ABO3 type ferroelectric thin film is further formed on the buffer layer. The epitaxial or orientative buffer layer has a structure in which a perovskite ABO3 type thin film is formed on an MgO thin film. Also, an orientative ferroelectric thin film has such a structure that an opitaxial MgO buffer layer is formed on a single crystal Si (100) substrate, and an epitaxial or orientative perovskite ABO3 type ferroelectric thin film is formed on the buffer layer.
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