发明名称 |
Method of producing PN junction device |
摘要 |
A PN junction device is formed by removing an inert film from a surface of an N type semiconductor layer to expose an active face, then applying a source gas containing an P type impurity component to the active face to form an impurity adsorption film, and thereafter carrying out a solid-phase diffusion of the impurity is carried out from a diffusion source composed of the P type impurity adsorption film into the N type semiconductor layer to form therein a P type semiconductor layer to thereby provide a PN junction. Lastly, a pair of electrodes are connected to the respective semiconductor layers to form the an PN junction device.
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申请公布号 |
US5514620(A) |
申请公布日期 |
1996.05.07 |
申请号 |
US19940210769 |
申请日期 |
1994.03.21 |
申请人 |
SEIKO INSTRUMENTS INC. |
发明人 |
AOKI, KENJI;AKAMINE, TADAO;SAITO, NAOTO |
分类号 |
H01L21/225;H01L21/329;H01L21/822;H01L27/04;H01L29/861;H01L29/866;H01L29/88;H01L29/93;H01L31/0248;H01L31/103;H01L31/18;(IPC1-7):H01L21/225 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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