| 摘要 |
PURPOSE: To prevent a semiconductor device from being broken down even if energy, such as a surge voltage, is applied to the device and to lessen the heating of the device. CONSTITUTION: A trigger element 23 or a trigger element 23 and a bilateral Zener diode 24 is or are built in between the gate and the drain of a semiconductor device, whereby even if energy, such as a surge voltage, is applied to the device, the energy can be absorbed by a MOSFET 20 and the element 23. Thereby, as the breakdown of the device due to the energy, such as the surge voltage, can be prevented and heating of the device can be lessened, it becomes possible to protect the device even if a higher surface voltage is applied to the device. |
