发明名称 |
Method for forming Ti-tin laminates |
摘要 |
A method for forming Ti-TiN laminates adapted to reduce the formation of dust particles harmful to semiconductor devices without detriment to productivity, and a magnetron cathode for performing the method are provided. Ti films and TiN films are formed through sputtering of a Ti target using a multi-chamber system comprising at least two chambers each having a magnetron cathode in which a magnet can be moved to accommodate different films. The type of film being formed in each chamber is periodically alternated to prevent a buildup of TiN film adhered to the inner walls of the chambers which peels and causes dust particles.
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申请公布号 |
US5514257(A) |
申请公布日期 |
1996.05.07 |
申请号 |
US19940305837 |
申请日期 |
1994.09.14 |
申请人 |
ANELVA CORPORATION |
发明人 |
KOBAYASHI, MASAHIKO;TAKAHASHI, NOBUYOKI |
分类号 |
C23C14/06;C23C14/16;C23C14/34;C23C14/35;C23C14/56;H01J37/34;(IPC1-7):C23C14/34 |
主分类号 |
C23C14/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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