| 摘要 |
This invention aims at providing a method of, and an apparatus for, producing stably a high performance transistor on a glass or plastic substrate. A method of producing a thin film transistor on a glass or plastic substrate, characterized in that an inert gas heated to a predetermined temperature is introduced into a space in which the substrate is placed, before a thin film constituting the thin film transistor is formed, and adsorbed materials on the surface of the substrate are removed by bringing the substrate into contact with the inert gas. The introduction of the inert gas is continued until a predetermined pressure is reached, and subsequently, the inert gas is quickly exhausted to a predetermined pressure at an exhaust rate of at least 300 (l/sec). This procedure is preferably carried out repeatedly.
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