| 摘要 |
<p>An object of the present invention is to provide a method of manufacturing high quality semiconductor which enables formation of an oxidized film with high dielectric strength even under a lower temperature. In a process for forming an oxidized film by oxidizing a surface of semiconductor wafer or of a ,metallic thin film, an oxidized film is formed on a plasma atmosphere of a mixed gas including an inert gas and an oxygen to have the inert gas included in the oxidized film. <IMAGE></p> |
