发明名称 Method of making semiconductor diodes
摘要 A method of making a semiconductor diode including the steps of: i) stamping a sheet form metal to form a conductor element having a jumper electrode and a bottom electrode, bending connecting strips between the electrodes into a corrugated configuration so that the tip of the jumper electrode is over the bottom electrode, and placing a diode chip in between the tip and the bottom electrode; ii) soldering two opposite sides of the diode chip to the jumper electrode and the bottom electrode; iii) chemically etching the diode chip by an etchant, oxidizing the diode chip by an oxidizer, and applying the diode chip with a P-N junction protecting material and drying it by heating; iv) filing a sealing resin in the chip cavity of a multi-layer substrate board and applying the substrate board with a bonding agent, and attaching diode chip and conductor element subassembly to the substrate board and bending terminal portions of the conductor element to form terminals; v) applying a layer of bonding agent over a cover lid and fastening them to the conductor element by deforming the fastening fingers, and curing the bonding agent and the sealing resin by heating and vi) testing the electric parameters of the diode units and cutting out a cathode identification cut, and cutting into individual diode units and sorting according to its specifications and packing.
申请公布号 GB2294583(A) 申请公布日期 1996.05.01
申请号 GB19940021746 申请日期 1994.10.28
申请人 GEORGE * TAI 发明人 GEORGE * TAI
分类号 H01L23/495;(IPC1-7):H01L23/057 主分类号 H01L23/495
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