| 摘要 |
A method for forming metal contacts in an integrated circuit, comprises the steps of: forming a first insulating layer on a silicon substrate; forming and patterning a first metal layer on the first insulating layer; forming and patterning a photoresist layer on the first insulating layer and the first metal pattern such that portions of the first insulating layer and first metal pattern are partially exposed; etching the exposed portion of the first metal pattern using the photoresist pattern to form a fine metal pattern; removing the photoresist pattern; depositing a second insulating layer on the overall surface of the structure; removing the second insulating layer to a depth until the fine metal pattern is exposed; coating a third photoresist layer on a surface of the second insulating layer and a surface of the fine metal pattern; patterning the third photoresist layer such that the surface of the fine metal pattern and portions of the surface of the second insulating layer adjacent to and on both sides of the fine metal pattern are covered; etching the second insulating layer using the third photoresist pattern to form spaces in the second insulating layer; removing the third photoresist pattern; forming a second metal layer to fill the spaces in the second insulating layer; and removing the second metal layers until a top surface of the second insulating layer is exposed to thereby form metal contacts. |
