A processing chamber gas distribution manifold

摘要

The disclosures relates to an easy to modify, remove, clean, and replace gas distribution ring (50) for a highly corrosive plasma etch substrate processing chamber (30) is disclosed. Gas is provided to a gap (114) between adjacent pieces (70, 96) in sealing a ceramic dome (94) of the processing chamber to a lower wall section of processing chamber. The gap acts as a manifold type channel (114) around the periphery of the processing chamber. The channel opening is obstructed by the gas distribution ring. The gas distribution ring (50) includes a series of slots (62) in its surface which control the gas flow pattern into the processing chamber. The gas flow pattern can be easily adjusted merely by changing one gas distribution ring to another gas distribution ring with the desired slot configuration. The gas flow passages can easily be cleaned by removing the process chamber dome which exposes the gas flow passages in the gas distribution ring.