发明名称 |
Semiconductor device and method for manufacturing the same |
摘要 |
The semiconductor device according to the present invention comprises a V-groove (6) having V-shaped cross-section formed on a semiconductor substrate or on an epitaxial growth layer (3) grown on a semiconductor substrate, and an active layer (4) is provided only at the bottom of said V-groove. The method for manufacturing a semiconductor device according to the present invention comprises the steps of forming a stripe-like etching protective film in <011> direction of a semiconductor substrate or an epitaxial growth layer grown on it, performing gas etching using hydrogen chloride as etching gas on a semiconductor substrate or on an epitaxial growth layer grown on a semiconductor substrate to form a V-groove, and forming an active layer at the bottom of said V-groove. Quantum wires of good quality may for example be formed. <IMAGE> |
申请公布号 |
EP0709902(A1) |
申请公布日期 |
1996.05.01 |
申请号 |
EP19950307641 |
申请日期 |
1995.10.26 |
申请人 |
MITSUBISHI CHEMICAL CORPORATION |
发明人 |
SHIMOYAMA, KENJI;KIYOMI, KAZUMASA;GOTOH, HIDEKI;NAGOA, SATORU |
分类号 |
H01L33/06;H01L33/24;H01S5/227;H01S5/34 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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