High-frequency bipolar transistor structure, and related manufacturing process

摘要

A high-frequency bipolar transistor structure comprises a base region (4) of a first conductivity type formed in a silicon layer (3) of a second conductivity type, the base region (4) comprising an intrinsic base region (6) surrounded by an extrinsic base region (5), an emitter region (7) of the second conductivity type formed inside the intrinsic base region (6), the extrinsic base region (5) and the emitter region (7) being contacted by a first polysilicon layer (9) and a second polysilicon layer (15) respectively, the first (9) and the second (15) polysilicon layers being respectively contacted by a base metal electrode (13) and an emitter metal electrode (16); between the extrinsic base region (5) and the first polysilicon layer (9) a silicide layer (8) is provided to reduce the extrinsic base resistance of the bipolar transistor. <IMAGE>