发明名称 METHOD OF RE-ETCHING SUBSTRATE SURFACE OF HIGH DENSE INTEGRATED CIRCUIT
摘要 <p>PROBLEM TO BE SOLVED: To avoid undesirable redeposition by a method, wherein an etching product isolated at a time of re-etching a holding part is formed so as not to generate interceptions. SOLUTION: In a holding ring 2, there are provided at least three finger- shaped holding parts reaching an edge part of a substrate 1. Etching gas/an etching product passing through the holding part or flowing therebetween are accurately deposited outside a surface of the substrate 1. It is possible to avoid interception operations which may deposit an undesirable etching product in the holding part by a shape of the holding part, such that an end part on a substrate side is tapered or rounded into an arc-form. Thereby, undesirable redeposition can be avoided.</p>
申请公布号 JPH08111406(A) 申请公布日期 1996.04.30
申请号 JP19950264749 申请日期 1995.09.19
申请人 SIEMENS AG 发明人 UBUE ZAIDERU;RAINAA BURAUN
分类号 C23F4/00;H01L21/302;H01L21/3065;H01L21/321;H01L21/683;H01L21/687;(IPC1-7):H01L21/306;H01L21/68 主分类号 C23F4/00
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