发明名称 |
CURRENT DETECTION CIRCUIT |
摘要 |
PURPOSE: To ensure reliable overcurrent protective operation by inserting a diode for compensating the temperature characteristics between the base or gate of a control transistor and the emitter of a shunt transistor and providing a forward bias through a resistor element constantly when a main current flows through the diode. CONSTITUTION: The anode-cathode of a diode 12 for compensating the temperature characteristics is connected between the base of an NPN transistor 3 and the emitter of a second IGBT 2. A resistor element 13 for forward biasing the diode 12 constantly when a main current flows through a first IGBT 1 is connected between the base of the second IGBT 1 and the base of the NPN transistor. This circuitry realizes temperature compensation of the threshold base-emitter voltage of a control transistor for detecting the voltage drop across a detection resistor. |
申请公布号 |
JPH08111524(A) |
申请公布日期 |
1996.04.30 |
申请号 |
JP19940243063 |
申请日期 |
1994.10.06 |
申请人 |
TOSHIBA CORP |
发明人 |
MURAKAMI KOICHI;OMICHI MOTOHIRO |
分类号 |
H01L27/04;H01L21/822;H01L23/58;H01L29/739;H01L29/78;H03K17/082;H03K17/14;(IPC1-7):H01L29/78 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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