| 摘要 |
PURPOSE: To obtain a storage device capable of improving the yield. CONSTITUTION: A 16 M bit DRAM 111 is constituted of four adjacent 4 M bit blocks (4 M bit DRAMs) 121 to 124. Then, circuits of above described execution patterns are biult-up in every block of 121 to 124 and the relief of defective address is individually performed in respective blocks 121 to 124. In the case where respective blocks 121 to 124 are all relievable (nondefective), blocks are isolated by solid linesαand then pads other than input/output(I/O) pads in respective blocks 121 to 124 are connected to blocks at an assembly stage. Thus, the 16 M bit DRAM 111 in which respective blocks are combined is made to be a product.
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