发明名称 |
Semicondcutor device with improved contact |
摘要 |
A semiconductor device with an improved contact capable of improving junction breakdown voltage and junction leakage current by forming a contact at an active region without damaging bird' beak portions of its element-isolation oxide films and a method of making this semiconductor device. The semiconductor device comprises element-isolation oxide films formed on a semiconductor substrate, an etch barrier material film formed on bird's beak portions of element-isolation oxide films, an insulating film formed over the element-isolation oxide films and the etch barrier material layer, and a conductive material layer formed over the insulating film and in contact with the active region. In order to prevent the bird's beak portions of element-isolation oxide films from being damaged upon the formation of contact hole, the etch barrier material film has an etch selectivity different from that of a silicon oxide film formed on the active region.
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申请公布号 |
US5512778(A) |
申请公布日期 |
1996.04.30 |
申请号 |
US19930161236 |
申请日期 |
1993.12.02 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
CHUNG, IN S.;KIM, YOUN J. |
分类号 |
H01L21/3205;H01L21/28;H01L21/74;H01L21/768;H01L23/522;(IPC1-7):H01L23/58 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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