发明名称 Schottky enhanced CMOS output circuit
摘要 The high impedance state of a tri-state CMOS transistor output circuit is enhanced by serially connecting first and second Schottky diodes with the P-channel transistor and the N-channel transistor whereby in the high impedance state reverse bias of the substrate/source-drain diodes of the two transistors is prevented when the output of the circuit is taken beyond the supply voltage potentials of the output circuit.
申请公布号 USRE35221(E) 申请公布日期 1996.04.30
申请号 US19930061628 申请日期 1993.05.13
申请人 LINEAR TECHNOLOGY CORPORATION 发明人 REAY, ROBERT L.
分类号 H01L27/06;H01L27/092;H03K19/003;H03K19/094;H03K19/0948;(IPC1-7):H03K19/20 主分类号 H01L27/06
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