发明名称 |
Schottky enhanced CMOS output circuit |
摘要 |
The high impedance state of a tri-state CMOS transistor output circuit is enhanced by serially connecting first and second Schottky diodes with the P-channel transistor and the N-channel transistor whereby in the high impedance state reverse bias of the substrate/source-drain diodes of the two transistors is prevented when the output of the circuit is taken beyond the supply voltage potentials of the output circuit.
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申请公布号 |
USRE35221(E) |
申请公布日期 |
1996.04.30 |
申请号 |
US19930061628 |
申请日期 |
1993.05.13 |
申请人 |
LINEAR TECHNOLOGY CORPORATION |
发明人 |
REAY, ROBERT L. |
分类号 |
H01L27/06;H01L27/092;H03K19/003;H03K19/094;H03K19/0948;(IPC1-7):H03K19/20 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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