发明名称 Method for forming a pattern and forming a thin film used in pattern formation
摘要 In forming a thin film pattern, first a seed material film is formed on a substrate and then exposed using electron beam lithography, for example, in the shape of the pattern. The latent image is then removed and an oriented material is deposited on one of the seed material and the substrtate, which have different hydrophilicity properties, to form the pattern. The oriented film is formed by an LB film forming method, in one example, and in another example the LB film material is a cresol novolak resin having a proportion of p-cresol novolak to m-cresol novolak of at least 20%.
申请公布号 US5512328(A) 申请公布日期 1996.04.30
申请号 US19930098046 申请日期 1993.07.28
申请人 HITACHI, LTD. 发明人 YOSHIMURA, TOSHIYUKI;MIURA, NAOKO;OKAZAKI, SHINJI;TORIUMI, MINORU;SHIRAISHI, HIROSHI
分类号 B05D1/20;G03F7/075;G03F7/20;(IPC1-7):B05D3/06;B05D1/18;C08J7/04;C08J7/18 主分类号 B05D1/20
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