| 摘要 |
<p>PURPOSE: To obtain a double sided aligner in which a wiring pattern and a passivation film are not damaged during the semiconductor wafer process. CONSTITUTION: A surface mask 22b is sucked by evacuation to the stage 23 of a double sided aligner. A silicon substrate 20 is sucked to the surface mask 22b by evacuation through wafer suction holes 25 in the surface mask 22b shown by a dot line. In this regard, a level difference 24 is formed in order to protect a wiring or a passivation film formed on the surface of the silicon substrate against damage. The silicon substrate 20 is coated, on the rear side thereof, with photoresist. A rear side mask 22a is fixed onto the rear side of the silicon substrate 20 and a pattern is transferred to the photoresist through exposure.</p> |
